Semiconductor, Optoelectronics & FABs
Semiconductor, Optoelectronics & FABs
Self-Organized Pin-Type Nanostructuresand Manufacturing thereof on Silicon
By means of an RIE etch process for silicon (3), a pin-type structure (4,4a) without crystal defects is formed with high aspect ratio and with nano dimensions on the surface of silicon wafers without any additional patterning measures (e-beam, interferencelithography, and the like) by selecting the gas components of the etch plasma in self-organization. Abroadband antireflective behavior is obtained that may be applicable in many fields.
